High-performance polyimide-based ReRAM for nonvolatile memory application

Sheng Hsien Liu; Wen Luh Yang; Chi Chang Wu; Tien Sheng Chao; Meng Ru Ye; Yu Yuan Su; Po Yang Wang; Ming Jui Tsai

doi:10.1109/LED.2012.2224633

High-performance polyimide-based ReRAM for nonvolatile memory application

Sheng Hsien Liu, Wen Luh Yang, Chi Chang Wu, Tien Sheng Chao, Meng Ru Ye, Yu Yuan Su, Po Yang Wang, Ming Jui Tsai

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between high-and low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (> 10⁵) and superior endurance (> 10⁵ cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.

Original language	English
Article number	6365747
Pages (from-to)	123-125
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1109/LED.2012.2224633
Publication status	Published - 2013

Keywords

Polyimide (PI)
resistive random access memory (ReRAM) devices
sol-gel

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2012.2224633

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title = "High-performance polyimide-based ReRAM for nonvolatile memory application",

abstract = "In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between high-and low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (> 105) and superior endurance (> 105 cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.",

keywords = "Polyimide (PI), resistive random access memory (ReRAM) devices, sol-gel",

author = "Liu, {Sheng Hsien} and Yang, {Wen Luh} and Wu, {Chi Chang} and Chao, {Tien Sheng} and Ye, {Meng Ru} and Su, {Yu Yuan} and Wang, {Po Yang} and Tsai, {Ming Jui}",

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AU - Liu, Sheng Hsien

AU - Yang, Wen Luh

AU - Wu, Chi Chang

AU - Chao, Tien Sheng

AU - Ye, Meng Ru

AU - Su, Yu Yuan

AU - Wang, Po Yang

AU - Tsai, Ming Jui

PY - 2013

Y1 - 2013

N2 - In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between high-and low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (> 105) and superior endurance (> 105 cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.

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KW - Polyimide (PI)

KW - resistive random access memory (ReRAM) devices

KW - sol-gel

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High-performance polyimide-based ReRAM for nonvolatile memory application

Abstract

Keywords

ASJC Scopus subject areas

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