High-performance polyimide-based ReRAM for nonvolatile memory application

Sheng Hsien Liu, Wen Luh Yang, Chi Chang Wu, Tien Sheng Chao, Meng Ru Ye, Yu Yuan Su, Po Yang Wang, Ming Jui Tsai

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between high-and low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (> 105) and superior endurance (> 105 cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.

Original languageEnglish
Article number6365747
Pages (from-to)123-125
Number of pages3
JournalIEEE Electron Device Letters
Issue number1
Publication statusPublished - 2013


  • Polyimide (PI)
  • resistive random access memory (ReRAM) devices
  • sol-gel

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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