TY - JOUR
T1 - High-Performance, Air-Stable, Low-Temperature Processed Semitransparent Perovskite Solar Cells Enabled by Atomic Layer Deposition
AU - Chang, Chih Yu
AU - Lee, Kuan Ting
AU - Huang, Wen Kuan
AU - Siao, Hao Yi
AU - Chang, Yu Chia
PY - 2015/7/28
Y1 - 2015/7/28
N2 - We demonstrate high-performance, air-stable, low-temperature processed (100°C) semitransparent (ST) perovskite solar cells (PSCs) by the applications of atomic layer deposition (ALD) technology to deposit ZnO and Al2O3 films as cathode buffer layer (CBL) and encapsulation layer, respectively. The application of ALD ZnO film as CBL in PSCs delivers several remarkable features, including fine-tunability of the work function of the electrode, low deposition temperature (80°C), high charge selectivity, good electron-transporting ability (filed-effect mobility = 16.1 cm2 V-1 s-1), and excellent film coverage. With these desired interfacial properties, the device with opaque Ag electrode delivers high power conversion efficiency (PCE) up to 16.5%, greatly outperforming the device with state-of-the-art CBL ZnO nanoparticles film (10.8%). For ST PSCs employing Ag nanowires as transparent top electrode, a remarkable PCE of 10.8% with a corresponding average visible transmittance (AVT) of 25.5% is demonstrated, which represents the highest PCE ever reported for ST PSCs with similar AVT. More significantly, the insufficient ambient stability of ST device is significantly improved by employing excellent gas-barrier performance of ALD Al2O3-based encapsulation layer with an oxygen transmission rate of 1.9 × 10-3 cm3 m-2 day-1 and a water vapor transmittance rate of 9.0 × 10-4 g m-2 day-1.
AB - We demonstrate high-performance, air-stable, low-temperature processed (100°C) semitransparent (ST) perovskite solar cells (PSCs) by the applications of atomic layer deposition (ALD) technology to deposit ZnO and Al2O3 films as cathode buffer layer (CBL) and encapsulation layer, respectively. The application of ALD ZnO film as CBL in PSCs delivers several remarkable features, including fine-tunability of the work function of the electrode, low deposition temperature (80°C), high charge selectivity, good electron-transporting ability (filed-effect mobility = 16.1 cm2 V-1 s-1), and excellent film coverage. With these desired interfacial properties, the device with opaque Ag electrode delivers high power conversion efficiency (PCE) up to 16.5%, greatly outperforming the device with state-of-the-art CBL ZnO nanoparticles film (10.8%). For ST PSCs employing Ag nanowires as transparent top electrode, a remarkable PCE of 10.8% with a corresponding average visible transmittance (AVT) of 25.5% is demonstrated, which represents the highest PCE ever reported for ST PSCs with similar AVT. More significantly, the insufficient ambient stability of ST device is significantly improved by employing excellent gas-barrier performance of ALD Al2O3-based encapsulation layer with an oxygen transmission rate of 1.9 × 10-3 cm3 m-2 day-1 and a water vapor transmittance rate of 9.0 × 10-4 g m-2 day-1.
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U2 - 10.1021/acs.chemmater.5b01933
DO - 10.1021/acs.chemmater.5b01933
M3 - Article
AN - SCOPUS:84937846609
SN - 0897-4756
VL - 27
SP - 5122
EP - 5130
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 14
ER -