Evolution of resistive switching mechanism through H                         2                         O                         2                          sensing by using TaO                         x                         -based material in W/Al                         2                         O                         3                         /TaO                         x                         /TiN structure

Somsubhra Chakrabarti; Rajeswar Panja; Sourav Roy; Anisha Roy; Subhranu Samanta; Mrinmoy Dutta; Sreekanth Ginnaram; Siddheswar Maikap; Hsin Ming Cheng; Ling Na Tsai; Ya Ling Chang; Rajat Mahapatra; Debanjan Jana; Jian Tai Qiu; Jer Ren Yang

doi:10.1016/j.apsusc.2017.10.072

Evolution of resistive switching mechanism through H ₂ O ₂ sensing by using TaO _x -based material in W/Al ₂ O ₃ /TaO _x /TiN structure

Somsubhra Chakrabarti
, Rajeswar Panja
, Sourav Roy
, Anisha Roy
, Subhranu Samanta
, Mrinmoy Dutta
, Sreekanth Ginnaram
, Siddheswar Maikap
, Hsin Ming Cheng
, Ling Na Tsai
, Ya Ling Chang
, Rajat Mahapatra
, Debanjan Jana
, Jian Tai Qiu
, Jer Ren Yang

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Understanding of resistive switching mechanism through H ₂ O ₂ sensing and improvement of switching characteristics by using TaO _x -based material in W/Al ₂ O ₃ /TaO _x /TiN structure have been reported for the first time. Existence of amorphous Al ₂ O ₃ /TaO _x layer in the RRAM devices has been confirmed by transmission electron microscopy. By analyzing the oxidation states of Ta ²⁺ /Ta ⁵⁺ for TaO _x switching material and W ⁰ /W ⁶⁺ for WO _x layer at the W/TaO _x interface through X-ray photoelectron spectroscopy and H ₂ O ₂ sensing, the reduction-oxidation mechanism under Set/Reset occurs only in the TaO _x layer for the W/Al ₂ O ₃ /TaO _x /TiN structures. This leads to higher Schottky barrier height at the W/Al ₂ O ₃ interface (0.54 eV vs. 0.46 eV), higher resistance ratio, and long program/erase endurance of >10 ⁸ cycles with 100 ns pulse width at a low operation current of 30 μA. Stable retention of more than 10 ⁴ s at 85 °C is also obtained. Using conduction mechanism and reduction-oxidation reaction, current-voltage characteristic has been simulated. Both TaO _x and WO _x membranes have high pH sensitivity values of 47.65 mV/pH and 49.25 mV/pH, respectively. Those membranes can also sense H ₂ O ₂ with a low concentration of 1 nM in an electrolyte-insulator-semiconductor structure because of catalytic activity, while the Al ₂ O ₃ membrane does not show sensing. The TaO _x material in W/Al ₂ O ₃ /TaO _x /TiN structure does not show only a path towards high dense, small size memory application with understanding of switching mechanism but also can be used for H ₂ O ₂ sensors.

Original language	English
Pages (from-to)	51-59
Number of pages	9
Journal	Applied Surface Science
Volume	433
DOIs	https://doi.org/10.1016/j.apsusc.2017.10.072
Publication status	Published - Mar 1 2018
Externally published	Yes

Keywords

Al O layer
H O sensing
Simulation
Switching mechanism
TaO switching material
WO membrane

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2017.10.072

Cite this

Chakrabarti, S., Panja, R., Roy, S., Roy, A., Samanta, S., Dutta, M., Ginnaram, S., Maikap, S., Cheng, H. M., Tsai, L. N., Chang, Y. L., Mahapatra, R., Jana, D., Qiu, J. T., & Yang, J. R. (2018). Evolution of resistive switching mechanism through H ₂ O ₂ sensing by using TaO _x -based material in W/Al ₂ O ₃ /TaO _x /TiN structure. Applied Surface Science, 433, 51-59. https://doi.org/10.1016/j.apsusc.2017.10.072

Evolution of resistive switching mechanism through H ₂ O ₂ sensing by using TaO _x -based material in W/Al ₂ O ₃ /TaO _x /TiN structure. / Chakrabarti, Somsubhra; Panja, Rajeswar; Roy, Sourav et al.
In: Applied Surface Science, Vol. 433, 01.03.2018, p. 51-59.

Research output: Contribution to journal › Article › peer-review

Chakrabarti, S, Panja, R, Roy, S, Roy, A, Samanta, S, Dutta, M, Ginnaram, S, Maikap, S, Cheng, HM, Tsai, LN, Chang, YL, Mahapatra, R, Jana, D, Qiu, JT & Yang, JR 2018, 'Evolution of resistive switching mechanism through H ₂ O ₂ sensing by using TaO _x -based material in W/Al ₂ O ₃ /TaO _x /TiN structure', Applied Surface Science, vol. 433, pp. 51-59. https://doi.org/10.1016/j.apsusc.2017.10.072

Chakrabarti S, Panja R, Roy S, Roy A, Samanta S, Dutta M et al. Evolution of resistive switching mechanism through H ₂ O ₂ sensing by using TaO _x -based material in W/Al ₂ O ₃ /TaO _x /TiN structure. Applied Surface Science. 2018 Mar 1;433:51-59. doi: 10.1016/j.apsusc.2017.10.072

Chakrabarti, Somsubhra ; Panja, Rajeswar ; Roy, Sourav et al. / Evolution of resistive switching mechanism through H ₂ O ₂ sensing by using TaO _x -based material in W/Al ₂ O ₃ /TaO _x /TiN structure. In: Applied Surface Science. 2018 ; Vol. 433. pp. 51-59.

@article{6bada7ca7f4e4493b88857f8ba6e792a,

title = "Evolution of resistive switching mechanism through H 2 O 2 sensing by using TaO x -based material in W/Al 2 O 3 /TaO x /TiN structure",

abstract = " Understanding of resistive switching mechanism through H 2 O 2 sensing and improvement of switching characteristics by using TaO x -based material in W/Al 2 O 3 /TaO x /TiN structure have been reported for the first time. Existence of amorphous Al 2 O 3 /TaO x layer in the RRAM devices has been confirmed by transmission electron microscopy. By analyzing the oxidation states of Ta 2+ /Ta 5+ for TaO x switching material and W 0 /W 6+ for WO x layer at the W/TaO x interface through X-ray photoelectron spectroscopy and H 2 O 2 sensing, the reduction-oxidation mechanism under Set/Reset occurs only in the TaO x layer for the W/Al 2 O 3 /TaO x /TiN structures. This leads to higher Schottky barrier height at the W/Al 2 O 3 interface (0.54 eV vs. 0.46 eV), higher resistance ratio, and long program/erase endurance of >10 8 cycles with 100 ns pulse width at a low operation current of 30 μA. Stable retention of more than 10 4 s at 85 °C is also obtained. Using conduction mechanism and reduction-oxidation reaction, current-voltage characteristic has been simulated. Both TaO x and WO x membranes have high pH sensitivity values of 47.65 mV/pH and 49.25 mV/pH, respectively. Those membranes can also sense H 2 O 2 with a low concentration of 1 nM in an electrolyte-insulator-semiconductor structure because of catalytic activity, while the Al 2 O 3 membrane does not show sensing. The TaO x material in W/Al 2 O 3 /TaO x /TiN structure does not show only a path towards high dense, small size memory application with understanding of switching mechanism but also can be used for H 2 O 2 sensors. ",

keywords = "Al O layer, H O sensing, Simulation, Switching mechanism, TaO switching material, WO membrane",

author = "Somsubhra Chakrabarti and Rajeswar Panja and Sourav Roy and Anisha Roy and Subhranu Samanta and Mrinmoy Dutta and Sreekanth Ginnaram and Siddheswar Maikap and Cheng, \{Hsin Ming\} and Tsai, \{Ling Na\} and Chang, \{Ya Ling\} and Rajat Mahapatra and Debanjan Jana and Qiu, \{Jian Tai\} and Yang, \{Jer Ren\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2018",

month = mar,

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doi = "10.1016/j.apsusc.2017.10.072",

language = "English",

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T1 - Evolution of resistive switching mechanism through H 2 O 2 sensing by using TaO x -based material in W/Al 2 O 3 /TaO x /TiN structure

AU - Chakrabarti, Somsubhra

AU - Panja, Rajeswar

AU - Roy, Sourav

AU - Roy, Anisha

AU - Samanta, Subhranu

AU - Dutta, Mrinmoy

AU - Ginnaram, Sreekanth

AU - Maikap, Siddheswar

AU - Cheng, Hsin Ming

AU - Tsai, Ling Na

AU - Chang, Ya Ling

AU - Mahapatra, Rajat

AU - Jana, Debanjan

AU - Qiu, Jian Tai

AU - Yang, Jer Ren

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N2 - Understanding of resistive switching mechanism through H 2 O 2 sensing and improvement of switching characteristics by using TaO x -based material in W/Al 2 O 3 /TaO x /TiN structure have been reported for the first time. Existence of amorphous Al 2 O 3 /TaO x layer in the RRAM devices has been confirmed by transmission electron microscopy. By analyzing the oxidation states of Ta 2+ /Ta 5+ for TaO x switching material and W 0 /W 6+ for WO x layer at the W/TaO x interface through X-ray photoelectron spectroscopy and H 2 O 2 sensing, the reduction-oxidation mechanism under Set/Reset occurs only in the TaO x layer for the W/Al 2 O 3 /TaO x /TiN structures. This leads to higher Schottky barrier height at the W/Al 2 O 3 interface (0.54 eV vs. 0.46 eV), higher resistance ratio, and long program/erase endurance of >10 8 cycles with 100 ns pulse width at a low operation current of 30 μA. Stable retention of more than 10 4 s at 85 °C is also obtained. Using conduction mechanism and reduction-oxidation reaction, current-voltage characteristic has been simulated. Both TaO x and WO x membranes have high pH sensitivity values of 47.65 mV/pH and 49.25 mV/pH, respectively. Those membranes can also sense H 2 O 2 with a low concentration of 1 nM in an electrolyte-insulator-semiconductor structure because of catalytic activity, while the Al 2 O 3 membrane does not show sensing. The TaO x material in W/Al 2 O 3 /TaO x /TiN structure does not show only a path towards high dense, small size memory application with understanding of switching mechanism but also can be used for H 2 O 2 sensors.

AB - Understanding of resistive switching mechanism through H 2 O 2 sensing and improvement of switching characteristics by using TaO x -based material in W/Al 2 O 3 /TaO x /TiN structure have been reported for the first time. Existence of amorphous Al 2 O 3 /TaO x layer in the RRAM devices has been confirmed by transmission electron microscopy. By analyzing the oxidation states of Ta 2+ /Ta 5+ for TaO x switching material and W 0 /W 6+ for WO x layer at the W/TaO x interface through X-ray photoelectron spectroscopy and H 2 O 2 sensing, the reduction-oxidation mechanism under Set/Reset occurs only in the TaO x layer for the W/Al 2 O 3 /TaO x /TiN structures. This leads to higher Schottky barrier height at the W/Al 2 O 3 interface (0.54 eV vs. 0.46 eV), higher resistance ratio, and long program/erase endurance of >10 8 cycles with 100 ns pulse width at a low operation current of 30 μA. Stable retention of more than 10 4 s at 85 °C is also obtained. Using conduction mechanism and reduction-oxidation reaction, current-voltage characteristic has been simulated. Both TaO x and WO x membranes have high pH sensitivity values of 47.65 mV/pH and 49.25 mV/pH, respectively. Those membranes can also sense H 2 O 2 with a low concentration of 1 nM in an electrolyte-insulator-semiconductor structure because of catalytic activity, while the Al 2 O 3 membrane does not show sensing. The TaO x material in W/Al 2 O 3 /TaO x /TiN structure does not show only a path towards high dense, small size memory application with understanding of switching mechanism but also can be used for H 2 O 2 sensors.

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