Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon

G. S. Chen; J. J. Guo; C. K. Lin; Chen Sheng Hsu; L. C. Yang; J. S. Fang

doi:10.1116/1.1450580

Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon

G. S. Chen, J. J. Guo, C. K. Lin, Chen Sheng Hsu, L. C. Yang, J. S. Fang

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

The radio-frequency sputter-deposited textured TiN thin films used as diffusion barriers between copper and silicon were evaluated. The evaluations based on differences in sheet resistance, surface morphology and phase transformation induced by annealing Si/TiN (40 nm)/Cu(200 nm) samples suggested that (111) TiN was better diffusion barrier material for copper than (100) TiN. The crystallographic packing and microstructure of the textured diffusion barrier was found to be responsible for difference in barrier effectiveness.

Original language	English
Pages (from-to)	479-485
Number of pages	7
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	20
Issue number	2
DOIs	https://doi.org/10.1116/1.1450580
Publication status	Published - Mar 2002
Externally published	Yes

ASJC Scopus subject areas

Surfaces, Coatings and Films
Surfaces and Interfaces
Physics and Astronomy (miscellaneous)

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AU - Hsu, Chen Sheng

AU - Yang, L. C.

AU - Fang, J. S.

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Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon

Abstract

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