Estimating the detection stability of a Si nanowire sensor using an additional charging electrode

Min Cheng Chen; Hsiao Chien Chen; Ta Hsien Lee; Yu Hsien Lin; Jyun Hung Shih; Bo Wei Wang; Yun Fang Hou; Yi Ju Chen; Chia Yi Lin; Chang Hsien Lin; Yi Ping Hsieh; Chia Hua Ho; Mu Yi Hua; Jian Tai Qiu; Tahui Wang; Fu Liang Yang

doi:10.1109/IRPS.2013.6532089

Estimating the detection stability of a Si nanowire sensor using an additional charging electrode

Min Cheng Chen, Hsiao Chien Chen, Ta Hsien Lee, Yu Hsien Lin, Jyun Hung Shih, Bo Wei Wang, Yun Fang Hou, Yi Ju Chen, Chia Yi Lin, Chang Hsien Lin, Yi Ping Hsieh, Chia Hua Ho, Mu Yi Hua, Jian Tai Qiu, Tahui Wang, Fu Liang Yang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This paper proposes a sensing stability estimation method that involves using an additional forcing electrode to simulate the surface charge coupling effect for bottom gate nanowire sensors. The alteration of the Si nanowire can be observed by using the charging electrode without any complex surface treatment and micro-channel setup. The nanowire sensor has a distinct charge-sensitive slope (V_th shift > 60 mV/10^-16C) with a wire-width scaling of 35 nm. The proposed estimation technique simplifies the charge sensing operation.

Original language	English
Title of host publication	2013 IEEE International Reliability Physics Symposium, IRPS 2013
Pages	ME.1.1-ME.1.4
DOIs	https://doi.org/10.1109/IRPS.2013.6532089
Publication status	Published - 2013
Externally published	Yes
Event	2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA, United States Duration: Apr 14 2013 → Apr 18 2013

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	2013 IEEE International Reliability Physics Symposium, IRPS 2013
Country/Territory	United States
City	Monterey, CA
Period	4/14/13 → 4/18/13

Keywords

Charge coupling effect
dection stability
nanosensor fabrication
nanowire FET
semiconductive sensors

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/IRPS.2013.6532089

Cite this

Chen, M. C., Chen, H. C., Lee, T. H., Lin, Y. H., Shih, J. H., Wang, B. W., Hou, Y. F., Chen, Y. J., Lin, C. Y., Lin, C. H., Hsieh, Y. P., Ho, C. H., Hua, M. Y., Qiu, J. T., Wang, T., & Yang, F. L. (2013). Estimating the detection stability of a Si nanowire sensor using an additional charging electrode. In 2013 IEEE International Reliability Physics Symposium, IRPS 2013 (pp. ME.1.1-ME.1.4). Article 6532089 (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2013.6532089

Estimating the detection stability of a Si nanowire sensor using an additional charging electrode. / Chen, Min Cheng; Chen, Hsiao Chien; Lee, Ta Hsien et al.
2013 IEEE International Reliability Physics Symposium, IRPS 2013. 2013. p. ME.1.1-ME.1.4 6532089 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, MC, Chen, HC, Lee, TH, Lin, YH, Shih, JH, Wang, BW, Hou, YF, Chen, YJ, Lin, CY, Lin, CH, Hsieh, YP, Ho, CH, Hua, MY, Qiu, JT, Wang, T & Yang, FL 2013, Estimating the detection stability of a Si nanowire sensor using an additional charging electrode. in 2013 IEEE International Reliability Physics Symposium, IRPS 2013., 6532089, IEEE International Reliability Physics Symposium Proceedings, pp. ME.1.1-ME.1.4, 2013 IEEE International Reliability Physics Symposium, IRPS 2013, Monterey, CA, United States, 4/14/13. https://doi.org/10.1109/IRPS.2013.6532089

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title = "Estimating the detection stability of a Si nanowire sensor using an additional charging electrode",

abstract = "This paper proposes a sensing stability estimation method that involves using an additional forcing electrode to simulate the surface charge coupling effect for bottom gate nanowire sensors. The alteration of the Si nanowire can be observed by using the charging electrode without any complex surface treatment and micro-channel setup. The nanowire sensor has a distinct charge-sensitive slope (Vth shift > 60 mV/10-16C) with a wire-width scaling of 35 nm. The proposed estimation technique simplifies the charge sensing operation.",

keywords = "Charge coupling effect, dection stability, nanosensor fabrication, nanowire FET, semiconductive sensors",

author = "Chen, {Min Cheng} and Chen, {Hsiao Chien} and Lee, {Ta Hsien} and Lin, {Yu Hsien} and Shih, {Jyun Hung} and Wang, {Bo Wei} and Hou, {Yun Fang} and Chen, {Yi Ju} and Lin, {Chia Yi} and Lin, {Chang Hsien} and Hsieh, {Yi Ping} and Ho, {Chia Hua} and Hua, {Mu Yi} and Qiu, {Jian Tai} and Tahui Wang and Yang, {Fu Liang}",

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AU - Shih, Jyun Hung

AU - Wang, Bo Wei

AU - Hou, Yun Fang

AU - Chen, Yi Ju

AU - Lin, Chia Yi

AU - Lin, Chang Hsien

AU - Hsieh, Yi Ping

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AU - Hua, Mu Yi

AU - Qiu, Jian Tai

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AB - This paper proposes a sensing stability estimation method that involves using an additional forcing electrode to simulate the surface charge coupling effect for bottom gate nanowire sensors. The alteration of the Si nanowire can be observed by using the charging electrode without any complex surface treatment and micro-channel setup. The nanowire sensor has a distinct charge-sensitive slope (Vth shift > 60 mV/10-16C) with a wire-width scaling of 35 nm. The proposed estimation technique simplifies the charge sensing operation.

KW - Charge coupling effect

KW - dection stability

KW - nanosensor fabrication

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Estimating the detection stability of a Si nanowire sensor using an additional charging electrode

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Keywords

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