Enhanced efficiency in InGaN-based photovoltaic devices combined with nanocrystalline Bi2O3/P3HT heterojunction structures

Chun Feng Lai; Chung-Chieh Chang; Min Hsueh Wen; Chung Kwei Lin; Mau Kuen Wu

doi:10.1002/pssa.201228847

Enhanced efficiency in InGaN-based photovoltaic devices combined with nanocrystalline Bi₂O₃/P3HT heterojunction structures

Chun Feng Lai, Chung-Chieh Chang, Min Hsueh Wen, Chung Kwei Lin, Mau Kuen Wu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

This study experimentally investigates the ability of Bi₂O ₃/P3HT heterojunction thin films to improve the power-conversion efficiency of InGaN-based photovoltaic (PV) devices. InGaN-based PV devices combined with Bi₂O₃/P3HT heterojunctions were prepared using the pulsed laser deposition method. The Bi₂O₃/P3HT heterojunction creates carriers that combine with excitons through the light-absorbance process, which enhances the power-conversion efficiency of InGaN PV devices by approximately 36%. Thus, these Bi₂O ₃/P3HT heterojunctions can provide an efficiency improvement in InGaN PV devices and other related solar-cell applications.

Original language	English
Pages (from-to)	1133-1136
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	210
Issue number	6
DOIs	https://doi.org/10.1002/pssa.201228847
Publication status	Published - Jun 2013

Keywords

BiO
InGaN
P3HT
heterojunctions
photovoltaic effects

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Surfaces and Interfaces

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1002/pssa.201228847

Cite this

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title = "Enhanced efficiency in InGaN-based photovoltaic devices combined with nanocrystalline Bi2O3/P3HT heterojunction structures",

abstract = "This study experimentally investigates the ability of Bi2O 3/P3HT heterojunction thin films to improve the power-conversion efficiency of InGaN-based photovoltaic (PV) devices. InGaN-based PV devices combined with Bi2O3/P3HT heterojunctions were prepared using the pulsed laser deposition method. The Bi2O3/P3HT heterojunction creates carriers that combine with excitons through the light-absorbance process, which enhances the power-conversion efficiency of InGaN PV devices by approximately 36%. Thus, these Bi2O 3/P3HT heterojunctions can provide an efficiency improvement in InGaN PV devices and other related solar-cell applications.",

keywords = "BiO, InGaN, P3HT, heterojunctions, photovoltaic effects",

author = "Lai, {Chun Feng} and Chung-Chieh Chang and Wen, {Min Hsueh} and Lin, {Chung Kwei} and Wu, {Mau Kuen}",

year = "2013",

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AU - Lai, Chun Feng

AU - Chang, Chung-Chieh

AU - Wen, Min Hsueh

AU - Lin, Chung Kwei

AU - Wu, Mau Kuen

PY - 2013/6

Y1 - 2013/6

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AB - This study experimentally investigates the ability of Bi2O 3/P3HT heterojunction thin films to improve the power-conversion efficiency of InGaN-based photovoltaic (PV) devices. InGaN-based PV devices combined with Bi2O3/P3HT heterojunctions were prepared using the pulsed laser deposition method. The Bi2O3/P3HT heterojunction creates carriers that combine with excitons through the light-absorbance process, which enhances the power-conversion efficiency of InGaN PV devices by approximately 36%. Thus, these Bi2O 3/P3HT heterojunctions can provide an efficiency improvement in InGaN PV devices and other related solar-cell applications.

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KW - photovoltaic effects

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