Effects of W/Ir Top Electrode on Resistive Switching and Dopamine Sensing by Using Optimized TaOx-Based Memory Platform

Subhranu Samanta, Siddheswar Maikap, Anisha Roy, Surajit Jana, Jian Tai Qiu

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


Resistive switching with best structural optimization by taking 100 devices of each structure including tungsten/iridium (W/Ir) top electrode effects and dopamine sensing by inserting 2 nm thick Al2O3 interfacial layer in TaOx-based memory platform are reported for the first time. Statistical analysis of device-to-device switching uniformity for the formation voltage, low resistance state, and high resistance state is executed at low current compliance of 30 μA by inserting 2 nm thick Al2O3 layer underneath of W electrode in W/Al2O3/TaOx/TiN structure. Incorporation of defective layer (TaOx) into Ta2O5 layer is clearly observed from the high-resolution transmission electron microscope image of stressed device. A long program/erase endurance of >108 cycles under low current of 30 μA with pulse width of 100 ns and retention of >900 h at 85 °C is obtained. Diode-like rectifying at 1 μA with higher ratio of >5000, nonlinearity factor of >300, and complementary resistive switching are achieved by using Ir electrode. Transport mechanism is dominated by Schottky conduction. Dopamine at a low concentration of 1 × 10−12m is detected through porous Ir in Ir/Al2O3/TaOx/TiN structure owing to oxidation at the Ir/Al2O3 interface for the first time, which will be useful for early diagnosis of human diseases.

Original languageEnglish
Article number1700959
JournalAdvanced Materials Interfaces
Issue number24
Publication statusPublished - Dec 22 2017
Externally publishedYes


  • complementary resistive switching
  • diode
  • dopamine sensing
  • TaO/TaO
  • W/Ir top electrode

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering


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