Effects of capping layers on the electrical characteristics of nickel silicided junctions

Chi Chang Wu; Wen Fa Wu; P. Y. Su; L. J. Chen; Fu Hsiang Ko

doi:10.1016/j.mee.2007.01.198

Effects of capping layers on the electrical characteristics of nickel silicided junctions

Chi Chang Wu, Wen Fa Wu, P. Y. Su, L. J. Chen, Fu Hsiang Ko

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

In this paper, effects of capping layers on formation and electrical properties of Ni-silicided junctions have been investigated. Nickel silicide films using the Ti or TiN-capped layer process are used to compare to those by the uncapped process. The uncapped (Ni single layer) and TiN-capped samples are shown to exhibit better thermal stability than the Ti-capped samples. For the silicided junctions, samples using Ti capping layer processes exhibit larger leakage current densities. A high-resistivity Ni_xTi_ySi_z compound layer is formed on the surface during silicidation for the Ti-capped sample, while the uncapped and TiN-capped samples are not. In addition, it is found that the thickness of NiSi layer, as well as the Ni_xTi_ySi_z layer, increases with increasing the Ti capping layer thickness. The formation of Ni_xTi_ySi_z layer not only increases the contact resistance, but also deepens the silicide thickness.

Original language	English
Pages (from-to)	1801-1805
Number of pages	5
Journal	Microelectronic Engineering
Volume	84
Issue number	5-8
DOIs	https://doi.org/10.1016/j.mee.2007.01.198
Publication status	Published - May 2007
Externally published	Yes

Keywords

Capping layer
Junction diode
Nickel silicide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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@article{ff72aef1d92c419da3a897123ed8b6d6,

title = "Effects of capping layers on the electrical characteristics of nickel silicided junctions",

abstract = "In this paper, effects of capping layers on formation and electrical properties of Ni-silicided junctions have been investigated. Nickel silicide films using the Ti or TiN-capped layer process are used to compare to those by the uncapped process. The uncapped (Ni single layer) and TiN-capped samples are shown to exhibit better thermal stability than the Ti-capped samples. For the silicided junctions, samples using Ti capping layer processes exhibit larger leakage current densities. A high-resistivity NixTiySiz compound layer is formed on the surface during silicidation for the Ti-capped sample, while the uncapped and TiN-capped samples are not. In addition, it is found that the thickness of NiSi layer, as well as the NixTiySiz layer, increases with increasing the Ti capping layer thickness. The formation of NixTiySiz layer not only increases the contact resistance, but also deepens the silicide thickness.",

keywords = "Capping layer, Junction diode, Nickel silicide",

author = "Wu, {Chi Chang} and Wu, {Wen Fa} and Su, {P. Y.} and Chen, {L. J.} and Ko, {Fu Hsiang}",

year = "2007",

month = may,

doi = "10.1016/j.mee.2007.01.198",

language = "English",

volume = "84",

pages = "1801--1805",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Effects of capping layers on the electrical characteristics of nickel silicided junctions

AU - Wu, Chi Chang

AU - Wu, Wen Fa

AU - Su, P. Y.

AU - Chen, L. J.

AU - Ko, Fu Hsiang

PY - 2007/5

Y1 - 2007/5

N2 - In this paper, effects of capping layers on formation and electrical properties of Ni-silicided junctions have been investigated. Nickel silicide films using the Ti or TiN-capped layer process are used to compare to those by the uncapped process. The uncapped (Ni single layer) and TiN-capped samples are shown to exhibit better thermal stability than the Ti-capped samples. For the silicided junctions, samples using Ti capping layer processes exhibit larger leakage current densities. A high-resistivity NixTiySiz compound layer is formed on the surface during silicidation for the Ti-capped sample, while the uncapped and TiN-capped samples are not. In addition, it is found that the thickness of NiSi layer, as well as the NixTiySiz layer, increases with increasing the Ti capping layer thickness. The formation of NixTiySiz layer not only increases the contact resistance, but also deepens the silicide thickness.

AB - In this paper, effects of capping layers on formation and electrical properties of Ni-silicided junctions have been investigated. Nickel silicide films using the Ti or TiN-capped layer process are used to compare to those by the uncapped process. The uncapped (Ni single layer) and TiN-capped samples are shown to exhibit better thermal stability than the Ti-capped samples. For the silicided junctions, samples using Ti capping layer processes exhibit larger leakage current densities. A high-resistivity NixTiySiz compound layer is formed on the surface during silicidation for the Ti-capped sample, while the uncapped and TiN-capped samples are not. In addition, it is found that the thickness of NiSi layer, as well as the NixTiySiz layer, increases with increasing the Ti capping layer thickness. The formation of NixTiySiz layer not only increases the contact resistance, but also deepens the silicide thickness.

KW - Capping layer

KW - Junction diode

KW - Nickel silicide

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 5-8

ER -

Effects of capping layers on the electrical characteristics of nickel silicided junctions

Abstract

Keywords

ASJC Scopus subject areas

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