Effect of the Bulk Charge on the Thermal Noise in Mental-Oxide-Silicon Field-Effect Transistors

C. T. Sah; F. H. Hielscher; S. Y. Wu

doi:10.1109/T-ED.1965.15592

Effect of the Bulk Charge on the Thermal Noise in Mental-Oxide-Silicon Field-Effect Transistors

C. T. Sah, F. H. Hielscher, S. Y. Wu

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	509-510
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	12
Issue number	9
DOIs	https://doi.org/10.1109/T-ED.1965.15592
Publication status	Published - Jan 1 1965
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1965.15592

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title = "Effect of the Bulk Charge on the Thermal Noise in Mental-Oxide-Silicon Field-Effect Transistors",

author = "Sah, \{C. T.\} and Hielscher, \{F. H.\} and Wu, \{S. Y.\}",

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JO - IEEE Transactions on Electron Devices

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Effect of the Bulk Charge on the Thermal Noise in Mental-Oxide-Silicon Field-Effect Transistors

ASJC Scopus subject areas

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