Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method

Chien Yie Tsay; Hua Chi Cheng; Yen Ting Tung; Wei Hsing Tuan; Chung Kwei Lin

doi:10.1016/j.tsf.2008.06.030

Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method

Chien Yie Tsay, Hua Chi Cheng, Yen Ting Tung, Wei Hsing Tuan, Chung Kwei Lin

Research output: Contribution to journal › Article › peer-review

240 Citations (Scopus)

Abstract

In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sn doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.%. The as-deposited films were pre-heated at 300 °C for 10 min and then annealed in air at 500 °C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.% Sn concentration exhibited the best properties, namely an average transmittance of 90%, an RMS roughness value of 1.92 nm and a resistivity of 9.3 × 10² Ω-cm.

Original language	English
Pages (from-to)	1032-1036
Number of pages	5
Journal	Thin Solid Films
Volume	517
Issue number	3
DOIs	https://doi.org/10.1016/j.tsf.2008.06.030
Publication status	Published - Dec 1 2008
Externally published	Yes

Keywords

Sn doping
Sol-gel method
Transparent oxide semiconductors
ZnO thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2008.06.030

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title = "Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method",

abstract = "In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sn doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.%. The as-deposited films were pre-heated at 300 °C for 10 min and then annealed in air at 500 °C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.% Sn concentration exhibited the best properties, namely an average transmittance of 90%, an RMS roughness value of 1.92 nm and a resistivity of 9.3 × 102 Ω-cm.",

keywords = "Sn doping, Sol-gel method, Transparent oxide semiconductors, ZnO thin films",

author = "Tsay, {Chien Yie} and Cheng, {Hua Chi} and Tung, {Yen Ting} and Tuan, {Wei Hsing} and Lin, {Chung Kwei}",

year = "2008",

month = dec,

day = "1",

doi = "10.1016/j.tsf.2008.06.030",

language = "English",

volume = "517",

pages = "1032--1036",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method

AU - Tsay, Chien Yie

AU - Cheng, Hua Chi

AU - Tung, Yen Ting

AU - Tuan, Wei Hsing

AU - Lin, Chung Kwei

PY - 2008/12/1

Y1 - 2008/12/1

N2 - In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sn doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.%. The as-deposited films were pre-heated at 300 °C for 10 min and then annealed in air at 500 °C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.% Sn concentration exhibited the best properties, namely an average transmittance of 90%, an RMS roughness value of 1.92 nm and a resistivity of 9.3 × 102 Ω-cm.

AB - In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sn doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.%. The as-deposited films were pre-heated at 300 °C for 10 min and then annealed in air at 500 °C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.% Sn concentration exhibited the best properties, namely an average transmittance of 90%, an RMS roughness value of 1.92 nm and a resistivity of 9.3 × 102 Ω-cm.

KW - Sn doping

KW - Sol-gel method

KW - Transparent oxide semiconductors

KW - ZnO thin films

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U2 - 10.1016/j.tsf.2008.06.030

DO - 10.1016/j.tsf.2008.06.030

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SN - 0040-6090

VL - 517

SP - 1032

EP - 1036

JO - Thin Solid Films

JF - Thin Solid Films

IS - 3

ER -

Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method

Abstract

Keywords

ASJC Scopus subject areas

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