Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdOx Membrane in Electrolyte-Insulator-Semiconductor Structure

Pankaj Kumar; Siddheswar Maikap; Jian Tai Qiu; Surajit Jana; Anisha Roy; Kanishk Singh; Hsin Ming Cheng; Mu Tung Chang; Rajat Mahapatra; Hsien Chin Chiu; Jer Ren Yang

doi:10.1186/s11671-016-1657-5

Detection of pH and Enzyme-Free H₂O₂ Sensing Mechanism by Using GdO_x Membrane in Electrolyte-Insulator-Semiconductor Structure

Pankaj Kumar, Siddheswar Maikap, Jian Tai Qiu, Surajit Jana, Anisha Roy, Kanishk Singh, Hsin Ming Cheng, Mu Tung Chang, Rajat Mahapatra, Hsien Chin Chiu, Jer Ren Yang

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A 15-nm-thick GdO_x membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H₂O₂) detection than those of the bare SiO₂ and 3-nm-thick GdO_x membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdO_x films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdO_x membrane, polycrystalline grain has lower energy gap and Gd²⁺ oxidation states lead to change Gd³⁺ states in the presence of H₂O₂, which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdO_x membrane with higher Gd content are responsible for detecting H₂O₂ whereas both bare SiO₂ and thinner GdO_x membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H₂O₂ concentration from 1 to 200 μM owing to more generation of Gd³⁺ ions, and the H₂O₂ sensing mechanism has been explained as well.

Original language	English
Article number	434
Journal	Nanoscale Research Letters
Volume	11
Issue number	1
DOIs	https://doi.org/10.1186/s11671-016-1657-5
Publication status	Published - Dec 1 2016
Externally published	Yes

Keywords

Catalytic
EIS structure
Enzyme-free HO
GdO
pH detection
Sensing mechanism

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

Access to Document

10.1186/s11671-016-1657-5

Cite this

@article{b117ebb3c90a43a7ba2af2da35947801,

title = "Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdOx Membrane in Electrolyte-Insulator-Semiconductor Structure",

abstract = "A 15-nm-thick GdOx membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H2O2) detection than those of the bare SiO2 and 3-nm-thick GdOx membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdOx films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdOx membrane, polycrystalline grain has lower energy gap and Gd2+ oxidation states lead to change Gd3+ states in the presence of H2O2, which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdOx membrane with higher Gd content are responsible for detecting H2O2 whereas both bare SiO2 and thinner GdOx membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H2O2 concentration from 1 to 200 μM owing to more generation of Gd3+ ions, and the H2O2 sensing mechanism has been explained as well.",

keywords = "Catalytic, EIS structure, Enzyme-free HO, GdO, pH detection, Sensing mechanism",

author = "Pankaj Kumar and Siddheswar Maikap and Qiu, {Jian Tai} and Surajit Jana and Anisha Roy and Kanishk Singh and Cheng, {Hsin Ming} and Chang, {Mu Tung} and Rajat Mahapatra and Chiu, {Hsien Chin} and Yang, {Jer Ren}",

note = "Publisher Copyright: {\textcopyright} 2016, The Author(s).",

year = "2016",

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doi = "10.1186/s11671-016-1657-5",

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T1 - Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdOx Membrane in Electrolyte-Insulator-Semiconductor Structure

AU - Kumar, Pankaj

AU - Maikap, Siddheswar

AU - Qiu, Jian Tai

AU - Jana, Surajit

AU - Roy, Anisha

AU - Singh, Kanishk

AU - Cheng, Hsin Ming

AU - Chang, Mu Tung

AU - Mahapatra, Rajat

AU - Chiu, Hsien Chin

AU - Yang, Jer Ren

PY - 2016/12/1

Y1 - 2016/12/1

N2 - A 15-nm-thick GdOx membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H2O2) detection than those of the bare SiO2 and 3-nm-thick GdOx membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdOx films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdOx membrane, polycrystalline grain has lower energy gap and Gd2+ oxidation states lead to change Gd3+ states in the presence of H2O2, which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdOx membrane with higher Gd content are responsible for detecting H2O2 whereas both bare SiO2 and thinner GdOx membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H2O2 concentration from 1 to 200 μM owing to more generation of Gd3+ ions, and the H2O2 sensing mechanism has been explained as well.

AB - A 15-nm-thick GdOx membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H2O2) detection than those of the bare SiO2 and 3-nm-thick GdOx membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdOx films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdOx membrane, polycrystalline grain has lower energy gap and Gd2+ oxidation states lead to change Gd3+ states in the presence of H2O2, which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdOx membrane with higher Gd content are responsible for detecting H2O2 whereas both bare SiO2 and thinner GdOx membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H2O2 concentration from 1 to 200 μM owing to more generation of Gd3+ ions, and the H2O2 sensing mechanism has been explained as well.

KW - Catalytic

KW - EIS structure

KW - Enzyme-free HO

KW - GdO

KW - pH detection

KW - Sensing mechanism

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