Abstract
Using 4-level pulse amplitude modulation (PAM-4) technique, the transmission data bit rate of the system or circuit can be doubled at the same bandwidth, compared to non-return zero (NRZ) binary modulation. In this paper, a PAM-4 vertical cavity surface emitting laser (VCSEL) diode driver circuit was designed in 90 nm CMOS technology. Through our circuit, two 10-Gb/s non-return zero (NRZ) input signals can be combined as a 20-Gb/s (10-GBaud/s) PAM-4 output current signal to drive a VCSEL diode. In our laser diode driver (LDD) circuit, the total modulation current is about 6.2mA, the power consumption is 34.1mW, and the chip size is 0.5×0.62 mm2. The VCSEL driver can be suitable to use in the transmitter module of short range optical fiber communications.
Original language | English |
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Title of host publication | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 195-198 |
Number of pages | 4 |
ISBN (Electronic) | 9781509018307 |
DOIs | |
Publication status | Published - Dec 15 2016 |
Externally published | Yes |
Event | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong Duration: Aug 3 2016 → Aug 5 2016 |
Conference
Conference | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 |
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Country/Territory | Hong Kong |
City | Hong Kong |
Period | 8/3/16 → 8/5/16 |
Keywords
- 4-level pulse amplitude modulation (PAM-4)
- laser diode driver (LDD)
- vertical cavity surface emitting laser (VCSEL)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Hardware and Architecture