Correction: Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]

Chia-Yu Wu; Huei Yu Huang; Chi Chang Wu

doi:10.20964/2018.06.300

Correction: Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

This was not noticed at the time by the authors and it is corrected by this correction now, and we apologize for any inconvenience this may cause.

Original language	English
Pages (from-to)	6156
Number of pages	1
Journal	International Journal of Electrochemical Science
Volume	13
Issue number	6
DOIs	https://doi.org/10.20964/2018.06.300
Publication status	Published - Jun 1 2018

ASJC Scopus subject areas

Electrochemistry

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10.20964/2018.06.300

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@article{85b94b49ac204c74b615fb2777ffe70e,

title = "Correction: Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]",

abstract = "This was not noticed at the time by the authors and it is corrected by this correction now, and we apologize for any inconvenience this may cause.",

author = "Chia-Yu Wu and Huang, {Huei Yu} and Wu, {Chi Chang}",

note = "Publisher Copyright: {\textcopyright} 2018 The Authors.",

year = "2018",

month = jun,

day = "1",

doi = "10.20964/2018.06.300",

language = "English",

volume = "13",

pages = "6156",

journal = "International Journal of Electrochemical Science",

issn = "1452-3981",

publisher = "Electrochemical Science Group",

number = "6",

}

TY - JOUR

T1 - Correction

T2 - Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]

AU - Wu, Chia-Yu

AU - Huang, Huei Yu

AU - Wu, Chi Chang

PY - 2018/6/1

Y1 - 2018/6/1

N2 - This was not noticed at the time by the authors and it is corrected by this correction now, and we apologize for any inconvenience this may cause.

AB - This was not noticed at the time by the authors and it is corrected by this correction now, and we apologize for any inconvenience this may cause.

UR - http://www.scopus.com/inward/record.url?scp=85048269415&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048269415&partnerID=8YFLogxK

U2 - 10.20964/2018.06.300

DO - 10.20964/2018.06.300

M3 - Comment/debate

AN - SCOPUS:85048269415

SN - 1452-3981

VL - 13

SP - 6156

JO - International Journal of Electrochemical Science

JF - International Journal of Electrochemical Science

IS - 6

ER -

Correction: Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]

Abstract

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