TY - JOUR
T1 - Controlling Resistive Switching by Using an Optimized MoS 2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaO x -Based RRAM
AU - Qiu, Jiantai Timothy
AU - Samanta, Subhranu
AU - Dutta, Mrinmoy
AU - Ginnaram, Sreekanth
AU - Maikap, Siddheswar
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology (MOST), Taiwan under contract numbers MOST-104-2221-E-182-075, MOST-107-2221-E-182-041 and Chang Gung Memorial Hospital (CGMH), Linkou under contract numbers CMRPD2E0091, CORPG3F0141, and CORPG3F0142. The authors are grateful to MSSCORPS CO., LTD., Hsinchu, Taiwan for HRTEM support of our pristine and stressed devices. The authors are also grateful to Electro-Optical Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan for the via-hole patterning. Ministry of Science and Technology (MOST), Taiwan under contract numbers: MOST-104-2221-E-182-075, MOST-107-2221-E-182-041; Chang Gung Memorial Hospital (CGMH), Linkou under contract number: CMRPD2E0091.
Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/3/19
Y1 - 2019/3/19
N2 - Controlled resistive switching by using an optimized 2 nm thick MoS 2 interfacial layer and the role of top electrodes (TEs) on ascorbic acid (AA) sensing in a TaO x -based resistive random access memory (RRAM) platform have been investigated for the first time. Both the high-resolution transmission electron microscopy (HRTEM) image and depth profile from energy dispersive X-ray spectroscopy confirm the presence of each layer in IrO x /Al 2 O 3 /TaO x /MoS 2 /TiN structure. The pristine device including the IrO x TE with the 2 nm thick interfacial layer shows the highest uniform rectifying direct current endurance >1000 cycles and a large rectifying ratio >3.2 × 10 4 , and a high nonlinearity factor >700 is obtained, greater than that of Pt and Ru TEs. After formation, this IrO x device produces bipolar resistive switching characteristics and a long program/erase (P/E) endurance >10 7 cycles at a low operation current of <50 μA with small pulse width of 100 ns. The stressed device shows a reduced Al 2 O 3 /TaO x interface from the HRTEM image, which is owing to O 2- ions' migration toward TiN electrode. By adjusting the RESET voltage and current level, consecutive >100 complementary resistive switching as well as long P/E endurance of >10 6 cycles are obtained. Schottky barrier height modulation at a low field is observed owing to reduction-oxidation of the TE, which is evidenced through reversible AA detection. At a higher field, Fowler-Nordheim tunneling and hopping conduction are observed. Ascorbic acid detection with a low concentration of 1 pM by using a porous IrO x /Al 2 O 3 /TaO x /MoS 2 /TiN RRAM device directly is an additional novelty of this work, which will be useful in future for early diagnosis of scurvy.
AB - Controlled resistive switching by using an optimized 2 nm thick MoS 2 interfacial layer and the role of top electrodes (TEs) on ascorbic acid (AA) sensing in a TaO x -based resistive random access memory (RRAM) platform have been investigated for the first time. Both the high-resolution transmission electron microscopy (HRTEM) image and depth profile from energy dispersive X-ray spectroscopy confirm the presence of each layer in IrO x /Al 2 O 3 /TaO x /MoS 2 /TiN structure. The pristine device including the IrO x TE with the 2 nm thick interfacial layer shows the highest uniform rectifying direct current endurance >1000 cycles and a large rectifying ratio >3.2 × 10 4 , and a high nonlinearity factor >700 is obtained, greater than that of Pt and Ru TEs. After formation, this IrO x device produces bipolar resistive switching characteristics and a long program/erase (P/E) endurance >10 7 cycles at a low operation current of <50 μA with small pulse width of 100 ns. The stressed device shows a reduced Al 2 O 3 /TaO x interface from the HRTEM image, which is owing to O 2- ions' migration toward TiN electrode. By adjusting the RESET voltage and current level, consecutive >100 complementary resistive switching as well as long P/E endurance of >10 6 cycles are obtained. Schottky barrier height modulation at a low field is observed owing to reduction-oxidation of the TE, which is evidenced through reversible AA detection. At a higher field, Fowler-Nordheim tunneling and hopping conduction are observed. Ascorbic acid detection with a low concentration of 1 pM by using a porous IrO x /Al 2 O 3 /TaO x /MoS 2 /TiN RRAM device directly is an additional novelty of this work, which will be useful in future for early diagnosis of scurvy.
UR - http://www.scopus.com/inward/record.url?scp=85063161869&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85063161869&partnerID=8YFLogxK
U2 - 10.1021/acs.langmuir.8b04090
DO - 10.1021/acs.langmuir.8b04090
M3 - Article
C2 - 30791683
AN - SCOPUS:85063161869
SN - 0743-7463
VL - 35
SP - 3897
EP - 3906
JO - Langmuir
JF - Langmuir
IS - 11
ER -