TY - JOUR
T1 - Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiNxOy/TiN
AU - Dutta, Mrinmoy
AU - Maikap, Siddheswar
AU - Qiu, Jiantai Timothy
N1 - Funding Information:
This work was supported by Ministry of Science and Technology (MOST), Taiwan under contract numbers MOST-105-2221-E-182-002 and MOST-107-2221-E-182-041, and Chang Gung Memorial Hospital (CGMH), Linkou under contract number CMRPD2E0091. The authors are grateful to Dr. S. Z. Rahaman and Dr. H. Y. Lee for helping pulse I–V measurement, Electro-optical Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan.
Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/2
Y1 - 2019/2
N2 - Controlling the copper (Cu) filament using an optimized porous iridium (Ir) interfacial layer thickness ranging from 2 to 20 nm in a Cu/Ir/TiNxOy/TiN resistive switching memory device is investigated for the first time. Transmission electron microscopy (TEM) shows a porous Ir layer, and X-ray photoelectron spectroscopy (XPS) is performed to determine the Ir0, Ir3+/Ir4+ oxidation states, which are responsible for a super-Nernstian pH sensitivity of 125.5 mV pH−1 as well as a low concentration of 1 × 10−12m tributyrin detected using a 40 nm thick Ir in Ir/TiNxOy/TiN structure. The 5 nm thick Ir layer in the Cu/Ir/TiNxOy/TiN structure shows current–voltage switching characteristics for 3000 consecutive cycles, a stable RESET voltage, a long program/erase (P/E) endurance of >109 cycles under a P/E current of 300 µA at a high speed of 100 ns, and neuromorphic phenomena compared to those of other Ir thicknesses. Cu migration into the TiNxOy oxide-electrolyte is shown by TEM observations. The tributyrin detection ranging from 1 × 10−12 to 100 × 10−12m using a resistive switching memory device paves the way for the early diagnosis of human diseases as well as artificial intelligence applications in the near future.
AB - Controlling the copper (Cu) filament using an optimized porous iridium (Ir) interfacial layer thickness ranging from 2 to 20 nm in a Cu/Ir/TiNxOy/TiN resistive switching memory device is investigated for the first time. Transmission electron microscopy (TEM) shows a porous Ir layer, and X-ray photoelectron spectroscopy (XPS) is performed to determine the Ir0, Ir3+/Ir4+ oxidation states, which are responsible for a super-Nernstian pH sensitivity of 125.5 mV pH−1 as well as a low concentration of 1 × 10−12m tributyrin detected using a 40 nm thick Ir in Ir/TiNxOy/TiN structure. The 5 nm thick Ir layer in the Cu/Ir/TiNxOy/TiN structure shows current–voltage switching characteristics for 3000 consecutive cycles, a stable RESET voltage, a long program/erase (P/E) endurance of >109 cycles under a P/E current of 300 µA at a high speed of 100 ns, and neuromorphic phenomena compared to those of other Ir thicknesses. Cu migration into the TiNxOy oxide-electrolyte is shown by TEM observations. The tributyrin detection ranging from 1 × 10−12 to 100 × 10−12m using a resistive switching memory device paves the way for the early diagnosis of human diseases as well as artificial intelligence applications in the near future.
KW - controlling filament
KW - interfacial layer
KW - pH sensitivity
KW - porous Ir
KW - tributyrin detection
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U2 - 10.1002/aelm.201800288
DO - 10.1002/aelm.201800288
M3 - Article
AN - SCOPUS:85058109197
SN - 2199-160X
VL - 5
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 2
M1 - 1800288
ER -