CMOS-based tactile sensors using oxide as sacrificial layer

Y. C. Lin; C. J. Hsieh; C. T. Sun; J. C. Liou; W. C. Tian

doi:10.1109/Transducers.2013.6627162

CMOS-based tactile sensors using oxide as sacrificial layer

Y. C. Lin, C. J. Hsieh, C. T. Sun, J. C. Liou, W. C. Tian

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this work, CMOS-based tactile sensors using oxide as the sacrificial layer was demonstrated. The multiple metal layers and dielectric layers in the backend of CMOS processes were used to fabricate the moveable membrane of capacitive-based tactile sensors. The sensor was fabricated by the commercial 0.35 μm CMOS process and our self-developed post CMOS oxide etching. Three different via designs were proposed to adjust mechanical strength of the membrane electrode. A multivibrator circuit was utilized to decrease the parasitic effect of the capacitive sensors. The tactile sensors with point-type vias showed the best sensitivity of 2.65 Hz/mmHg with the dynamic range 0-388 mmHg.

Original language	English
Title of host publication	2013 Transducers and Eurosensors XXVII
Subtitle of host publication	The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
Pages	1895-1898
Number of pages	4
DOIs	https://doi.org/10.1109/Transducers.2013.6627162
Publication status	Published - 2013
Externally published	Yes
Event	2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013 - Barcelona, Spain Duration: Jun 16 2013 → Jun 20 2013

Conference

Conference	2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
Country/Territory	Spain
City	Barcelona
Period	6/16/13 → 6/20/13

Keywords

CMOS MEMS
multivibrator circuit
oxide etching
pressure sensor
tactile sensor

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/Transducers.2013.6627162

Cite this

Lin, Y. C., Hsieh, C. J., Sun, C. T., Liou, J. C., & Tian, W. C. (2013). CMOS-based tactile sensors using oxide as sacrificial layer. In 2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013 (pp. 1895-1898). [6627162] https://doi.org/10.1109/Transducers.2013.6627162

CMOS-based tactile sensors using oxide as sacrificial layer. / Lin, Y. C.; Hsieh, C. J.; Sun, C. T. et al.
2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013. 2013. p. 1895-1898 6627162.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, YC, Hsieh, CJ, Sun, CT, Liou, JC & Tian, WC 2013, CMOS-based tactile sensors using oxide as sacrificial layer. in 2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013., 6627162, pp. 1895-1898, 2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013, Barcelona, Spain, 6/16/13. https://doi.org/10.1109/Transducers.2013.6627162

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abstract = "In this work, CMOS-based tactile sensors using oxide as the sacrificial layer was demonstrated. The multiple metal layers and dielectric layers in the backend of CMOS processes were used to fabricate the moveable membrane of capacitive-based tactile sensors. The sensor was fabricated by the commercial 0.35 μm CMOS process and our self-developed post CMOS oxide etching. Three different via designs were proposed to adjust mechanical strength of the membrane electrode. A multivibrator circuit was utilized to decrease the parasitic effect of the capacitive sensors. The tactile sensors with point-type vias showed the best sensitivity of 2.65 Hz/mmHg with the dynamic range 0-388 mmHg.",

keywords = "CMOS MEMS, multivibrator circuit, oxide etching, pressure sensor, tactile sensor",

author = "Lin, {Y. C.} and Hsieh, {C. J.} and Sun, {C. T.} and Liou, {J. C.} and Tian, {W. C.}",

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AB - In this work, CMOS-based tactile sensors using oxide as the sacrificial layer was demonstrated. The multiple metal layers and dielectric layers in the backend of CMOS processes were used to fabricate the moveable membrane of capacitive-based tactile sensors. The sensor was fabricated by the commercial 0.35 μm CMOS process and our self-developed post CMOS oxide etching. Three different via designs were proposed to adjust mechanical strength of the membrane electrode. A multivibrator circuit was utilized to decrease the parasitic effect of the capacitive sensors. The tactile sensors with point-type vias showed the best sensitivity of 2.65 Hz/mmHg with the dynamic range 0-388 mmHg.

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KW - multivibrator circuit

KW - oxide etching

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CMOS-based tactile sensors using oxide as sacrificial layer

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Keywords

ASJC Scopus subject areas

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