CMOS-based tactile sensors using oxide as sacrificial layer

Y. C. Lin, C. J. Hsieh, C. T. Sun, J. C. Liou, W. C. Tian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work, CMOS-based tactile sensors using oxide as the sacrificial layer was demonstrated. The multiple metal layers and dielectric layers in the backend of CMOS processes were used to fabricate the moveable membrane of capacitive-based tactile sensors. The sensor was fabricated by the commercial 0.35 μm CMOS process and our self-developed post CMOS oxide etching. Three different via designs were proposed to adjust mechanical strength of the membrane electrode. A multivibrator circuit was utilized to decrease the parasitic effect of the capacitive sensors. The tactile sensors with point-type vias showed the best sensitivity of 2.65 Hz/mmHg with the dynamic range 0-388 mmHg.

Original languageEnglish
Title of host publication2013 Transducers and Eurosensors XXVII
Subtitle of host publicationThe 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
Pages1895-1898
Number of pages4
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013 - Barcelona, Spain
Duration: Jun 16 2013Jun 20 2013

Publication series

Name2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013

Conference

Conference2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
Country/TerritorySpain
CityBarcelona
Period6/16/136/20/13

Keywords

  • CMOS MEMS
  • multivibrator circuit
  • oxide etching
  • pressure sensor
  • tactile sensor

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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