Abstract
In this work, CMOS-based tactile sensors using oxide as the sacrificial layer was demonstrated. The multiple metal layers and dielectric layers in the backend of CMOS processes were used to fabricate the moveable membrane of capacitive-based tactile sensors. The sensor was fabricated by the commercial 0.35 μm CMOS process and our self-developed post CMOS oxide etching. Three different via designs were proposed to adjust mechanical strength of the membrane electrode. A multivibrator circuit was utilized to decrease the parasitic effect of the capacitive sensors. The tactile sensors with point-type vias showed the best sensitivity of 2.65 Hz/mmHg with the dynamic range 0-388 mmHg.
Original language | English |
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Title of host publication | 2013 Transducers and Eurosensors XXVII |
Subtitle of host publication | The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013 |
Pages | 1895-1898 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 2013 |
Externally published | Yes |
Event | 2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013 - Barcelona, Spain Duration: Jun 16 2013 → Jun 20 2013 |
Conference
Conference | 2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013 |
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Country/Territory | Spain |
City | Barcelona |
Period | 6/16/13 → 6/20/13 |
Keywords
- CMOS MEMS
- multivibrator circuit
- oxide etching
- pressure sensor
- tactile sensor
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering