Characterization of the location and interfacial states of gallium in gallium/MCM-41 composites

Weiping Zhang, Christopher I. Ratcliffe, Igor L. Moudrakovski, John S. Tse, Chung Yuan Mou, John A. Ripmeester

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


A broad based approach, using nitrogen adsorption, X-ray diffraction, DSC, solid-state NMR and X-ray photoelectron spectroscopy, has been used to characterize a series of Ga/MCM-41 composite materials. Rather than filling the mesochannels of the MCM-41 it is found, through this combination of techniques, that most of the Ga is present in the spaces between the particles of MCM-41. High-angle XRD and 71Ga NMR indicate that at room temperature most of the Ga is in the liquid metal state. 29Si and 1H MAS NMR, and XPS reveal that at the Ga/MCM-41 interface the Ga reacts with silanol groups to form new Ga+ states like SiOGa, or bridging Si(OH)Ga hydroxyls.

Original languageEnglish
Pages (from-to)195-203
Number of pages9
JournalMicroporous and Mesoporous Materials
Issue number1-3
Publication statusPublished - Apr 1 2005
Externally publishedYes


  • Gallium-MCM-41 nano-composites
  • Porosimetry
  • PXRD
  • Solid-state NMR
  • XPS

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials


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