Characterization of pulsed laser deposited bismuth oxide ultrathin-film enhanced photovoltaic properties of InGaN solar cells

GaN of III-V materials have attracted interesting in the development of optoelectronic devices, such as light-emitting diodes (LEDs) and solar cells [1]. InGaN-based solar cells with the multijunction structures exhibited the photovoltaic characteristic. Unfortunately, most of the reported InGaN solar cells show very low power conversion efficiency of less than 2% [2]. This large discrepancy in efficiency originates from the difficulty in obtaining high-In-content InGaN alloy with good crystalline quality. In order to obtain more high efficiency, we believe better utilization of solar spectrum is necessary. Recently, the science of organic/inorganic nanocomposites is extremely promising for applications in LEDs, photodiodes, and solar cells [3]. Bismuth oxide (Bi2O3) of inorganic metal oxide material is an interesting material, due to its strong absorption to visible light and intrinsic polarizability, Bi2O3 could be enhancement the photovoltaic properties [4]. The concept of Bi2O3 ultrathin-film has, to our knowledge, not yet been applied to InGaN solar cells. Therefore, InGaN solar cells configuration combined Bi2O3 effects improvement the power conversion efficiency of photovoltaic have not been studied so far.
In this study, we investigate the photovoltaic properties of Bi2O3 ultrathin-films on InGaN solar cells. InGaN-based solar cell structures with Bi2O3 ultrathin-film were prepared through a pulsed laser deposition (PLD) method. The wavelength of the photovoltaic efficiency has enhanced by increasing the light absorption at Bi2O3 ultrathin-film.