Barrier capability of Hf-N films with various nitrogen concentrations against copper diffusion in Cu/Hf-N/n⁺-p junction diodes

Physics & Astronomy

• junction diodes 82%
• hafnium 78%
• p-n junctions 65%
• nitrogen 46%
• copper 45%
• hafnium compounds 43%
• annealing 31%
• electric contacts 27%
• barrier layers 22%
• phase transformations 18%
• thermal stability 18%
• copper compounds 17%
• blanks 12%
• x rays 9%
• radio frequencies 9%
• magnetron sputtering 8%
• photoelectron spectroscopy 8%
• penetration 8%
• wafers 7%
• transmission electron microscopy 6%
• electrical resistivity 6%
• silicon 5%
• diffraction 5%
• thin films 5%
• atoms 5%
• temperature 3%

Engineering & Materials Science

• Hafnium 100%
• Nitrogen 58%
• Diodes 58%
• Annealing 52%
• Copper 51%
• Hafnium compounds 49%
• Phase transitions 21%
• Thermodynamic stability 21%
• Copper compounds 19%
• Diffusion barriers 15%
• Magnetron sputtering 14%
• Surface chemistry 13%
• X ray photoelectron spectroscopy 12%
• Silicon wafers 12%
• Atoms 10%
• Transmission electron microscopy 10%
• X ray diffraction 10%
• Thin films 9%
• Temperature 8%
• Substrates 7%
• Hot Temperature 5%

Chemical Compounds

• Diffusion 38%
• Nitrogen 38%
• Liquid Film 30%
• Thermal Stability 16%
• Diffusion Barrier 15%
• Hafnium Atom 15%
• Sputtering 13%
• Surface Chemistry 11%
• Hexagonal Space Group 9%
• X-Ray Photoelectron Spectroscopy 8%
• Transmission Electron Microscopy 8%
• X-Ray Diffraction 6%