A robust data retention characteristic of SolGel-derived nanocrystal memory by hot-hole trapping

Chi Chang Wu; Fu Hsiang Ko; Wen Luh Yang; Hsin Chiang You; Fu Ken Liu; Chen Chih Yeh; Pin Lin Liu; Chiou Kou Tung; Ching Hwa Cheng

doi:10.1109/LED.2010.2048193

A robust data retention characteristic of SolGel-derived nanocrystal memory by hot-hole trapping

Chi Chang Wu, Fu Hsiang Ko, Wen Luh Yang, Hsin Chiang You, Fu Ken Liu, Chen Chih Yeh, Pin Lin Liu, Chiou Kou Tung, Ching Hwa Cheng

Graduate Institute of Biomedical Materials and Tissue Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A new solgel-derived Ti_xZr_ySi_zO nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, the high-density NC layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride. The electrical properties of the solgel-derived NC memory are demonstrated in terms of memory window, charge retention, program speed, and endurance. The memory window of the NC memory from the novel hot-hole-trapping mechanism can be achieved up to 4.18 ± 0.21 V, and long retention times obtained from extrapolation up to 10⁶ s are observed as 8%, 13%, and 21% window narrowing under respective temperatures of 25 °C, 85 °C, and 125 °C. The good electrical performance is attributed to the contribution of the high density of isolated NCs and hole-trapped into the deep-trap energy level, so no significant lateral and vertical charge leakage occurs.

Original language	English
Article number	5466227
Pages (from-to)	746-748
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	7
DOIs	https://doi.org/10.1109/LED.2010.2048193
Publication status	Published - Jul 2010

Keywords

Flash memory
hole trapping
nanocrystal (NC)
sol-gel

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2010.2048193

Cite this

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title = "A robust data retention characteristic of SolGel-derived nanocrystal memory by hot-hole trapping",

abstract = "A new solgel-derived TixZrySizO nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, the high-density NC layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride. The electrical properties of the solgel-derived NC memory are demonstrated in terms of memory window, charge retention, program speed, and endurance. The memory window of the NC memory from the novel hot-hole-trapping mechanism can be achieved up to 4.18 ± 0.21 V, and long retention times obtained from extrapolation up to 106 s are observed as 8%, 13%, and 21% window narrowing under respective temperatures of 25 °C, 85 °C, and 125 °C. The good electrical performance is attributed to the contribution of the high density of isolated NCs and hole-trapped into the deep-trap energy level, so no significant lateral and vertical charge leakage occurs.",

keywords = "Flash memory, hole trapping, nanocrystal (NC), sol-gel",

author = "Wu, {Chi Chang} and Ko, {Fu Hsiang} and Yang, {Wen Luh} and You, {Hsin Chiang} and Liu, {Fu Ken} and Yeh, {Chen Chih} and Liu, {Pin Lin} and Tung, {Chiou Kou} and Cheng, {Ching Hwa}",

note = "Funding Information: Manuscript received March 9, 2010; revised March 30, 2010; accepted April 7, 2010. Date of publication May 18, 2010; date of current version June 25, 2010. This work was supported by the National Science Council, Taiwan, under Contract NSC-98-2221-E-035-082-MY3. The review of this letter was arranged by Editor C.-P. Chang.",

year = "2010",

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AU - Wu, Chi Chang

AU - Ko, Fu Hsiang

AU - Yang, Wen Luh

AU - You, Hsin Chiang

AU - Liu, Fu Ken

AU - Yeh, Chen Chih

AU - Liu, Pin Lin

AU - Tung, Chiou Kou

AU - Cheng, Ching Hwa

N1 - Funding Information: Manuscript received March 9, 2010; revised March 30, 2010; accepted April 7, 2010. Date of publication May 18, 2010; date of current version June 25, 2010. This work was supported by the National Science Council, Taiwan, under Contract NSC-98-2221-E-035-082-MY3. The review of this letter was arranged by Editor C.-P. Chang.

PY - 2010/7

Y1 - 2010/7

N2 - A new solgel-derived TixZrySizO nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, the high-density NC layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride. The electrical properties of the solgel-derived NC memory are demonstrated in terms of memory window, charge retention, program speed, and endurance. The memory window of the NC memory from the novel hot-hole-trapping mechanism can be achieved up to 4.18 ± 0.21 V, and long retention times obtained from extrapolation up to 106 s are observed as 8%, 13%, and 21% window narrowing under respective temperatures of 25 °C, 85 °C, and 125 °C. The good electrical performance is attributed to the contribution of the high density of isolated NCs and hole-trapped into the deep-trap energy level, so no significant lateral and vertical charge leakage occurs.

AB - A new solgel-derived TixZrySizO nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, the high-density NC layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride. The electrical properties of the solgel-derived NC memory are demonstrated in terms of memory window, charge retention, program speed, and endurance. The memory window of the NC memory from the novel hot-hole-trapping mechanism can be achieved up to 4.18 ± 0.21 V, and long retention times obtained from extrapolation up to 106 s are observed as 8%, 13%, and 21% window narrowing under respective temperatures of 25 °C, 85 °C, and 125 °C. The good electrical performance is attributed to the contribution of the high density of isolated NCs and hole-trapped into the deep-trap energy level, so no significant lateral and vertical charge leakage occurs.

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KW - nanocrystal (NC)

KW - sol-gel

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A robust data retention characteristic of SolGel-derived nanocrystal memory by hot-hole trapping

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Keywords

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