A robust data retention characteristic of SolGel-derived nanocrystal memory by hot-hole trapping

Chi Chang Wu, Fu Hsiang Ko, Wen Luh Yang, Hsin Chiang You, Fu Ken Liu, Chen Chih Yeh, Pin Lin Liu, Chiou Kou Tung, Ching Hwa Cheng

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


A new solgel-derived TixZrySizO nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, the high-density NC layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride. The electrical properties of the solgel-derived NC memory are demonstrated in terms of memory window, charge retention, program speed, and endurance. The memory window of the NC memory from the novel hot-hole-trapping mechanism can be achieved up to 4.18 ± 0.21 V, and long retention times obtained from extrapolation up to 106 s are observed as 8%, 13%, and 21% window narrowing under respective temperatures of 25 °C, 85 °C, and 125 °C. The good electrical performance is attributed to the contribution of the high density of isolated NCs and hole-trapped into the deep-trap energy level, so no significant lateral and vertical charge leakage occurs.

Original languageEnglish
Article number5466227
Pages (from-to)746-748
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
Publication statusPublished - Jul 2010


  • Flash memory
  • hole trapping
  • nanocrystal (NC)
  • sol-gel

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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