A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology

Min Cheng Chen; Hou Yu Chen; Chia Yi Lin; Chuan Mei Tsai; Chung Fan Hsieh; Jim Tong Horng; Jian Tai Qiu; Chien Chao Huang; Fu Liang Yang

doi:10.1109/IEDM.2010.5703485

A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology

Min Cheng Chen, Hou Yu Chen, Chia Yi Lin, Chuan Mei Tsai, Chung Fan Hsieh, Jim Tong Horng, Jian Tai Qiu, Chien Chao Huang, Fu Liang Yang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

For the first time, a novel smart biosensor with hybrid sensor/memory/CMOS poly-Si nanowire technology has been developed. Special designed oxide-nitride-oxide composite dielectric underneath 50nm nanowire realizes an electrically V_th-adjustable sensor to compensate device variation. The detections of pH, hydrogen peroxide and DNA are demonstrated using various functionalized receptors. A substrate-ionic coupling operation of the buried-channel field-effect sensor exhibits superior pH sensitivity (V ^th shift > 100mV/pH) beyond Nernst limitation. The built-in memory of nanowire devices possess steady electrically V^th adjustment (V^th programming/erasing window > 2V), enable portable physiology monitoring and in-situ recording. In this work, we report a fully CMOS-compatible technique for Lab-on-Chip biosensor application.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	36.2.1-36.2.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703485
Publication status	Published - 2010
Externally published	Yes
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: Dec 6 2010 → Dec 8 2010

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	12/6/10 → 12/8/10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2010.5703485

Cite this

Chen, M. C., Chen, H. Y., Lin, C. Y., Tsai, C. M., Hsieh, C. F., Horng, J. T., Qiu, J. T., Huang, C. C., & Yang, F. L. (2010). A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 36.2.1-36.2.4). Article 5703485 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703485

A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology. / Chen, Min Cheng; Chen, Hou Yu; Lin, Chia Yi et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 36.2.1-36.2.4 5703485 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, MC, Chen, HY, Lin, CY, Tsai, CM, Hsieh, CF, Horng, JT, Qiu, JT, Huang, CC & Yang, FL 2010, A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703485, Technical Digest - International Electron Devices Meeting, IEDM, pp. 36.2.1-36.2.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 12/6/10. https://doi.org/10.1109/IEDM.2010.5703485

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title = "A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology",

abstract = "For the first time, a novel smart biosensor with hybrid sensor/memory/CMOS poly-Si nanowire technology has been developed. Special designed oxide-nitride-oxide composite dielectric underneath 50nm nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. The detections of pH, hydrogen peroxide and DNA are demonstrated using various functionalized receptors. A substrate-ionic coupling operation of the buried-channel field-effect sensor exhibits superior pH sensitivity (V th shift > 100mV/pH) beyond Nernst limitation. The built-in memory of nanowire devices possess steady electrically Vth adjustment (Vth programming/erasing window > 2V), enable portable physiology monitoring and in-situ recording. In this work, we report a fully CMOS-compatible technique for Lab-on-Chip biosensor application.",

author = "Chen, {Min Cheng} and Chen, {Hou Yu} and Lin, {Chia Yi} and Tsai, {Chuan Mei} and Hsieh, {Chung Fan} and Horng, {Jim Tong} and Qiu, {Jian Tai} and Huang, {Chien Chao} and Yang, {Fu Liang}",

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doi = "10.1109/IEDM.2010.5703485",

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AU - Chen, Min Cheng

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AU - Lin, Chia Yi

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AU - Hsieh, Chung Fan

AU - Horng, Jim Tong

AU - Qiu, Jian Tai

AU - Huang, Chien Chao

AU - Yang, Fu Liang

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AB - For the first time, a novel smart biosensor with hybrid sensor/memory/CMOS poly-Si nanowire technology has been developed. Special designed oxide-nitride-oxide composite dielectric underneath 50nm nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. The detections of pH, hydrogen peroxide and DNA are demonstrated using various functionalized receptors. A substrate-ionic coupling operation of the buried-channel field-effect sensor exhibits superior pH sensitivity (V th shift > 100mV/pH) beyond Nernst limitation. The built-in memory of nanowire devices possess steady electrically Vth adjustment (Vth programming/erasing window > 2V), enable portable physiology monitoring and in-situ recording. In this work, we report a fully CMOS-compatible technique for Lab-on-Chip biosensor application.

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A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology

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