TY - JOUR
T1 - A novel ion-bombarded and plasma-passivated charge storage layer for SONOS-type nonvolatile memory
AU - Liu, Sheng Hsien
AU - Yang, Wen Luh
AU - Wu, Chi Chang
AU - Chao, Tien Sheng
N1 - Funding Information:
The authors would like to thank the processing support from the National Nano Device Laboratories.
Funding Information:
Manuscript received May 7, 2012; revised June 12, 2012; accepted June 30, 2012. Date of publication August 23, 2012; date of current version September 21, 2012. This work was supported by the National Science Council, Taiwan, through Contract NSC 98-2221-E-035-082-MY3. The review of this letter was arranged by Editor T. San. S.-H. Liu is with the Ph. D. Program of Electrical and Communications Engineering, Feng Chia University, Taichung 40724, Taiwan. W.-L. Yang is with the Department of Electronic Engineering, Feng Chia University, Taichung 40724, Taiwan (e-mail: [email protected]). C.-C. Wu is with the Graduate Institute of Biomedical Materials and Tissue Engineering, College of Oral Medicine, Taipei Medical University, Taipei 110, Taiwan. T.-S. Chao is with Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2012.2207699
PY - 2012
Y1 - 2012
N2 - A novel technique combination of ion bombardment (IB) and NH 3 plasma treatment (PT) has been presented to yield a highly effective charge storage layer for Si/SiO2/Si3N4/SiO2/Si (SONOS)-type nonvolatile memory applications. The IB technique creates additional trap sites within the charge storage layer strikingly to enhance the charge trapping/detrapping efficiency of the storage layer, and the NH 3 PT passivates shallow trap sites significantly to improve reliability characteristics. The distribution of trap sites corresponding with various energy levels is clearly described by discharge-based multipulse analysis. As compared with the control sample (without IB and NH 3 PT), the ion-bombarded and NH 3-plasma- passivated memory device has faster program/erase speeds and larger memory window. In addition, the competent reliability properties of the ion-bombarded and NH 3-plasma-passivated memory, such as good endurance, long data retention, and acceptable disturbance, were also demonstrated in this letter.
AB - A novel technique combination of ion bombardment (IB) and NH 3 plasma treatment (PT) has been presented to yield a highly effective charge storage layer for Si/SiO2/Si3N4/SiO2/Si (SONOS)-type nonvolatile memory applications. The IB technique creates additional trap sites within the charge storage layer strikingly to enhance the charge trapping/detrapping efficiency of the storage layer, and the NH 3 PT passivates shallow trap sites significantly to improve reliability characteristics. The distribution of trap sites corresponding with various energy levels is clearly described by discharge-based multipulse analysis. As compared with the control sample (without IB and NH 3 PT), the ion-bombarded and NH 3-plasma- passivated memory device has faster program/erase speeds and larger memory window. In addition, the competent reliability properties of the ion-bombarded and NH 3-plasma-passivated memory, such as good endurance, long data retention, and acceptable disturbance, were also demonstrated in this letter.
KW - Discharge-based multipulse (DMP)
KW - Flash memory
KW - NH plasma treatment (PT)
KW - ion bombardment (IB)
KW - metal/Al2O3/Si3N4/SiO2/Si (MANOS)
UR - http://www.scopus.com/inward/record.url?scp=84866935587&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84866935587&partnerID=8YFLogxK
U2 - 10.1109/LED.2012.2207699
DO - 10.1109/LED.2012.2207699
M3 - Article
AN - SCOPUS:84866935587
SN - 0741-3106
VL - 33
SP - 1393
EP - 1395
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 10
M1 - 6280616
ER -