A Novel Approach to Fabricate Silicon Nanowire Field Effect Transistor for Biomolecule Sensing

Chi Chang Wu; Yankuba B. Manga; Jia Yang Hung; Wen Luh Yang

doi:10.1007/978-3-319-69814-4_25

A Novel Approach to Fabricate Silicon Nanowire Field Effect Transistor for Biomolecule Sensing

Chi Chang Wu, Yankuba B. Manga, Jia Yang Hung, Wen Luh Yang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A novel silicon nanowire field effect transistor (SiNW-FET) was fabricated using complementary metal oxide semiconductor (CMOS) compatible technology. The shrank nanowire with high surface-to-volume ratio and individual back gate were achieved by the local-oxidation of silicon (LOCOS) process. The width of nanowire by this technique can be shrank down to sub 100, nm. The drain current versus gate voltage (Id-Vg) characteristic of the SiNW-FET exhibits about five orders of magnitude of Ion/Ioff current ratio, and the threshold voltage shifts positively after hybridization of 1fM concentrations of HBV X gene DNA fragments and 3, ng/mL concentrations of the cancer marker, respectively. The results show that the back-gated nanowire device has the capability of acting as a real-time, label-free, highly sensitivity and excellent selectivity SiNW-FET biosensor in detecting biomolecules.

Original language	English
Title of host publication	AETA 2017 - Recent Advances in Electrical Engineering and Related Sciences - Theory and Application
Editors	Sang Bong Kim, Tran Trong Dao, Ivan Zelinka, Vo Hoang Duy, Tran Thanh Phuong
Publisher	Springer Verlag
Pages	250-257
Number of pages	8
ISBN (Print)	9783319698137
DOIs	https://doi.org/10.1007/978-3-319-69814-4_25
Publication status	Published - 2018
Externally published	Yes
Event	4th International Conference on Advanced Engineering Theory and Applications, AETA 2017 - Ho Chi Minh, Viet Nam Duration: Dec 7 2017 → Dec 9 2017

Publication series

Name	Lecture Notes in Electrical Engineering
Volume	465
ISSN (Print)	1876-1100
ISSN (Electronic)	1876-1119

Other

Other	4th International Conference on Advanced Engineering Theory and Applications, AETA 2017
Country/Territory	Viet Nam
City	Ho Chi Minh
Period	12/7/17 → 12/9/17

Keywords

Biosensor
Field effect transistor
LOCOS
SiNW
Silicon nanowire

ASJC Scopus subject areas

Industrial and Manufacturing Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1007/978-3-319-69814-4_25

Cite this

Wu, C. C., Manga, Y. B., Hung, J. Y., & Yang, W. L. (2018). A Novel Approach to Fabricate Silicon Nanowire Field Effect Transistor for Biomolecule Sensing. In S. B. Kim, T. T. Dao, I. Zelinka, V. H. Duy, & T. T. Phuong (Eds.), AETA 2017 - Recent Advances in Electrical Engineering and Related Sciences - Theory and Application (pp. 250-257). (Lecture Notes in Electrical Engineering; Vol. 465). Springer Verlag. https://doi.org/10.1007/978-3-319-69814-4_25

A Novel Approach to Fabricate Silicon Nanowire Field Effect Transistor for Biomolecule Sensing. / Wu, Chi Chang; Manga, Yankuba B.; Hung, Jia Yang et al.
AETA 2017 - Recent Advances in Electrical Engineering and Related Sciences - Theory and Application. ed. / Sang Bong Kim; Tran Trong Dao; Ivan Zelinka; Vo Hoang Duy; Tran Thanh Phuong. Springer Verlag, 2018. p. 250-257 (Lecture Notes in Electrical Engineering; Vol. 465).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wu, CC, Manga, YB, Hung, JY & Yang, WL 2018, A Novel Approach to Fabricate Silicon Nanowire Field Effect Transistor for Biomolecule Sensing. in SB Kim, TT Dao, I Zelinka, VH Duy & TT Phuong (eds), AETA 2017 - Recent Advances in Electrical Engineering and Related Sciences - Theory and Application. Lecture Notes in Electrical Engineering, vol. 465, Springer Verlag, pp. 250-257, 4th International Conference on Advanced Engineering Theory and Applications, AETA 2017, Ho Chi Minh, Viet Nam, 12/7/17. https://doi.org/10.1007/978-3-319-69814-4_25

Wu CC, Manga YB, Hung JY, Yang WL. A Novel Approach to Fabricate Silicon Nanowire Field Effect Transistor for Biomolecule Sensing. In Kim SB, Dao TT, Zelinka I, Duy VH, Phuong TT, editors, AETA 2017 - Recent Advances in Electrical Engineering and Related Sciences - Theory and Application. Springer Verlag. 2018. p. 250-257. (Lecture Notes in Electrical Engineering). doi: 10.1007/978-3-319-69814-4_25

Wu, Chi Chang ; Manga, Yankuba B. ; Hung, Jia Yang et al. / A Novel Approach to Fabricate Silicon Nanowire Field Effect Transistor for Biomolecule Sensing. AETA 2017 - Recent Advances in Electrical Engineering and Related Sciences - Theory and Application. editor / Sang Bong Kim ; Tran Trong Dao ; Ivan Zelinka ; Vo Hoang Duy ; Tran Thanh Phuong. Springer Verlag, 2018. pp. 250-257 (Lecture Notes in Electrical Engineering).

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N2 - A novel silicon nanowire field effect transistor (SiNW-FET) was fabricated using complementary metal oxide semiconductor (CMOS) compatible technology. The shrank nanowire with high surface-to-volume ratio and individual back gate were achieved by the local-oxidation of silicon (LOCOS) process. The width of nanowire by this technique can be shrank down to sub 100, nm. The drain current versus gate voltage (Id-Vg) characteristic of the SiNW-FET exhibits about five orders of magnitude of Ion/Ioff current ratio, and the threshold voltage shifts positively after hybridization of 1fM concentrations of HBV X gene DNA fragments and 3, ng/mL concentrations of the cancer marker, respectively. The results show that the back-gated nanowire device has the capability of acting as a real-time, label-free, highly sensitivity and excellent selectivity SiNW-FET biosensor in detecting biomolecules.

AB - A novel silicon nanowire field effect transistor (SiNW-FET) was fabricated using complementary metal oxide semiconductor (CMOS) compatible technology. The shrank nanowire with high surface-to-volume ratio and individual back gate were achieved by the local-oxidation of silicon (LOCOS) process. The width of nanowire by this technique can be shrank down to sub 100, nm. The drain current versus gate voltage (Id-Vg) characteristic of the SiNW-FET exhibits about five orders of magnitude of Ion/Ioff current ratio, and the threshold voltage shifts positively after hybridization of 1fM concentrations of HBV X gene DNA fragments and 3, ng/mL concentrations of the cancer marker, respectively. The results show that the back-gated nanowire device has the capability of acting as a real-time, label-free, highly sensitivity and excellent selectivity SiNW-FET biosensor in detecting biomolecules.

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A Novel Approach to Fabricate Silicon Nanowire Field Effect Transistor for Biomolecule Sensing

Abstract

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Keywords

ASJC Scopus subject areas

UN SDGs

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