A GaAs non-volatile memory

D. L. Harrington, W. C. Gee, J. F. Fay, I. S. Leybovich, I. K. Naik, T. P. Nicalek, B. P. Maderic, L. E. Sanchez, M. W. Stoddard, G. L. Troeger, S. H. Watanabe, S. Y. Wu, J. K. Notthoff

Research output: Chapter in Book/Report/Conference proceedingConference contribution


A GaAs non-volatile memory that retains data without power by using a ferroelectric capacitor memory storage element has been developed. A complete 2K/4K bit ferroelectric random access memory (FERRAM) and two test modules have been fabricated. Initial results on the test modules and the FERRAM have demonstrated the feasibility of this approach. This is believed to be the first demonstration of a non-volatile memory circuit using GaAs technology.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
PublisherPubl by IEEE
Number of pages4
ISBN (Print)078030196X
Publication statusPublished - Jan 1 1992
Event13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA
Duration: Oct 20 1991Oct 23 1991

Publication series

NameTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)


Conference13th Annual GaAs IC Symposium Technical Digest
CityMonterey, CA, USA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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