Abstract
In this study, the formation mechanism of nanocrystals (NCs) from the sol-gel spin-coating method had been studied. The ZrCl4, HfCl4, and SiCl4 were used as the sol-gel precursors to form the hafnium and zirconium silicate after rapid thermal annealing at high temperature. We evaluated the impact of temperature and preparation solvent type for the formation of sol-gel derived nanocrystals. In addition, the performance of flash memory with the nanocrystal as the charge trapping layer was also demonstrated.
| Translated title of the contribution | Novel Sol-Gel Derived Nonvolatile Nanocrystal Memory Devices |
|---|---|
| Original language | Chinese (Traditional) |
| Pages (from-to) | 21-27 |
| Number of pages | 7 |
| Journal | 科儀新知 |
| Issue number | 166 |
| Publication status | Published - 2008 |